JPS649897B2 - - Google Patents

Info

Publication number
JPS649897B2
JPS649897B2 JP1447584A JP1447584A JPS649897B2 JP S649897 B2 JPS649897 B2 JP S649897B2 JP 1447584 A JP1447584 A JP 1447584A JP 1447584 A JP1447584 A JP 1447584A JP S649897 B2 JPS649897 B2 JP S649897B2
Authority
JP
Japan
Prior art keywords
screw
pulse
die
fixed die
movable die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1447584A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60162544A (ja
Inventor
Hisao Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Topura Co Ltd
Original Assignee
Topura Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topura Co Ltd filed Critical Topura Co Ltd
Priority to JP1447584A priority Critical patent/JPS60162544A/ja
Publication of JPS60162544A publication Critical patent/JPS60162544A/ja
Publication of JPS649897B2 publication Critical patent/JPS649897B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21HMAKING PARTICULAR METAL OBJECTS BY ROLLING, e.g. SCREWS, WHEELS, RINGS, BARRELS, BALLS
    • B21H9/00Feeding arrangements for rolling machines or apparatus manufacturing articles dealt with in this subclass
    • B21H9/02Feeding arrangements for rolling machines or apparatus manufacturing articles dealt with in this subclass for screw-rolling machines

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Machine Tool Sensing Apparatuses (AREA)
JP1447584A 1984-01-31 1984-01-31 ねじ転造機におけるねじのスベリ不良検出装置 Granted JPS60162544A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1447584A JPS60162544A (ja) 1984-01-31 1984-01-31 ねじ転造機におけるねじのスベリ不良検出装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1447584A JPS60162544A (ja) 1984-01-31 1984-01-31 ねじ転造機におけるねじのスベリ不良検出装置

Publications (2)

Publication Number Publication Date
JPS60162544A JPS60162544A (ja) 1985-08-24
JPS649897B2 true JPS649897B2 (en]) 1989-02-20

Family

ID=11862082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1447584A Granted JPS60162544A (ja) 1984-01-31 1984-01-31 ねじ転造機におけるねじのスベリ不良検出装置

Country Status (1)

Country Link
JP (1) JPS60162544A (en])

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818981U (ja) * 1981-07-30 1983-02-05 株式会社デサント 伸縮性細巾織物

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501344B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501343B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7235486B2 (en) 2000-06-28 2007-06-26 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7115494B2 (en) 2000-06-28 2006-10-03 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7033922B2 (en) 2000-06-28 2006-04-25 Applied Materials. Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7465666B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7094680B2 (en) 2001-02-02 2006-08-22 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7494908B2 (en) 2001-09-26 2009-02-24 Applied Materials, Inc. Apparatus for integration of barrier layer and seed layer
US7352048B2 (en) 2001-09-26 2008-04-01 Applied Materials, Inc. Integration of barrier layer and seed layer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7429516B2 (en) 2002-02-26 2008-09-30 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Also Published As

Publication number Publication date
JPS60162544A (ja) 1985-08-24

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